Metal nanocrystals as charge storage nodes for nonvolatile memory devices

P. H. Yeh, L. J. Chen*, Po-Tsun Liu, D. Y. Wang, T. C. Chang

*此作品的通信作者

研究成果: Article同行評審

50 引文 斯高帕斯(Scopus)

摘要

The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum IG Write/Erase/IG Retention ratio can be obtained.

原文English
頁(從 - 到)2920-2926
頁數7
期刊Electrochimica Acta
52
發行號8 SPEC. ISS.
DOIs
出版狀態Published - 10 2月 2007

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