Metal nanocrystal/nitride heterogeneous-stack floating gate memory

Keyphrases

• Nitrides 100%
• Metal Nanocrystals 100%
• Floating Gate Memory 100%
• Floating Gate 60%
• Au Nanocrystals 50%
• Nanocrystals 40%
• Silicon-oxide-nitride-oxide-silicon (SONOS) 40%
• Flat-band Voltage 40%
• Double Stack 40%
• Silicon Nitride 30%
• Gate Stack 30%
• Direct Tunneling 30%
• Low Voltage 20%
• Tunnel Oxide 20%
• Memory Window 20%
• Charge Loss 20%
• Nanocrystal Memory 20%
• Low-voltage Operation 20%
• Nanocrystal Formation 20%
• Retention Characteristics 20%
• Long Retention Time 20%
• Long-term Retention 20%
• Stored Charge 20%
• Charge Saturation 20%
• Metal Nitrides 20%
• Charge Storage Capacity 20%
• Charge Storage 20%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 10%
• Silica 10%
• Flash Memory Devices 10%
• Hysteresis 10%
• Capacitance 10%
• Charge-based 10%
• Oxides 10%
• Room Temperature 10%
• Elevated Temperature 10%
• Gate Oxide 10%
• Memory Operations 10%
• Gate Structure 10%
• Semiconductors 10%
• Adaptation 10%
• Electrical Characterization 10%
• Gate Voltage 10%
• Oxide Breakdown 10%
• Single Metal 10%
• Non-volatile Memory 10%
• Storage Characteristics 10%
• Single Stack 10%
• Fair Comparison 10%
• Total Charges 10%
• Charge Transfer 10%
• Tunneling Mechanism 10%
• PECVD Nitride 10%
• Endurance Test 10%
• Fabrication Conditions 10%
• High Temperature Test 10%
• Operational Voltage 10%
• Nitrided Layer 10%
• Batch Processing 10%
• Intermediate Media 10%
• Additional Charges 10%
• Thick Metal 10%
• Hybrid Memory 10%
• Oxide Deposition 10%
• Metal Evaporation 10%
• C-V Measurement 10%
• MONOS 10%
• Small Fluctuation 10%
• Nonvolatile Memory Technologies 10%
• Capacity Retention 10%
• Saturation Time 10%
• SEM Observation 10%
• Capacitance Measurement 10%
• Semiconductor Nanocrystals 10%
• Si Nanocrystals 10%
• Local Charge 10%

Material Science

• Nitride Compound 100%
• Oxide Compound 42%
• Silicon Nitride 21%
• Capacitance 7%
• Scanning Electron Microscopy 7%
• Capacitance Measurement 7%