Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area

Bing Yue Tsui*, Yen Ling Chen, Shih Hao Lai

*此作品的通信作者

研究成果: Article同行評審

摘要

In this study, metal contact on p-type SiC with low specific contact resistance was developed using TiAl. Using fine-tuned TiAl deposition and annealing conditions on p-type SiC, the Ti-Si-C interfacial layer grown on high temperature ion implanted P+ SiC is nonuniform and exhibits nonohmic behavior when the contact area becomes smaller than 10 μ m × 10 μ m. This area dependence can be improved through low-energy, room-temperature (LERT) ion implantation and Ar plasma treatment prior to metal deposition. Ar plasma treatment results in a uniform Al-Si-C interfacial layer. Moreover, the defects produced by LERT ion implantation promote trap-assisted tunneling. Through the aforementioned methods, metal contact on p-type SiC with a record-low specific contact resistance of 3× 10-5 Ω cm2 at record-small contact area of 1.5 μ m × 1.5 μ m was obtained in this study.

原文English
頁(從 - 到)1539-1542
頁數4
期刊Ieee Electron Device Letters
44
發行號9
DOIs
出版狀態Published - 1 9月 2023

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