Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

V. A. Volodin; G. N. Kamaev; V. A. Gritsenko; A. A. Gismatulin; A. Chin; M. Vergnat

doi:10.1063/1.5079690

Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films

V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, M. Vergnat

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摘要

The p-Si(or n-Si)/GeO[SiO₂] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO₂ and SiO₂ (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO₂] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO₂] or GeO[SiO] films.

原文	English
文章編號	233104
期刊	Applied Physics Letters
卷	114
發行號	23
DOIs	https://doi.org/10.1063/1.5079690
出版狀態	Published - 10 6月 2019

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title = "Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films",

abstract = "The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.",

author = "Volodin, {V. A.} and Kamaev, {G. N.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and A. Chin and M. Vergnat",

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doi = "10.1063/1.5079690",

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T1 - Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Chin, A.

AU - Vergnat, M.

PY - 2019/6/10

Y1 - 2019/6/10

N2 - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

AB - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

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Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

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Memristor effect in GeO[SiO₂] and GeO[SiO] solid alloys films