Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, M. Vergnat

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

原文English
文章編號233104
期刊Applied Physics Letters
114
發行號23
DOIs
出版狀態Published - 10 六月 2019

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