摘要
The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.
原文 | English |
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頁(從 - 到) | 2094-2096 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 84 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 22 3月 2004 |