Memory effect of oxide/SiC:O/oxide sandwiched structures

The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.