Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang*, S. T. Van, F. M. Yang, Po-Tsun Liu, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.

原文English
頁(從 - 到)2094-2096
頁數3
期刊Applied Physics Letters
84
發行號12
DOIs
出版狀態Published - 22 3月 2004

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