Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang; S. T. Van; F. M. Yang; Po-Tsun Liu; S. M. Sze

doi:10.1063/1.1675924

Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang^*, S. T. Van, F. M. Yang, Po-Tsun Liu, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.

原文	English
頁（從 - 到）	2094-2096
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	12
DOIs	https://doi.org/10.1063/1.1675924
出版狀態	Published - 22 3月 2004

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10.1063/1.1675924

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abstract = "The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.",

author = "Chang, {T. C.} and Van, {S. T.} and Yang, {F. M.} and Po-Tsun Liu and Sze, {S. M.}",

year = "2004",

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doi = "10.1063/1.1675924",

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T1 - Memory effect of oxide/SiC:O/oxide sandwiched structures

AU - Chang, T. C.

AU - Van, S. T.

AU - Yang, F. M.

AU - Liu, Po-Tsun

AU - Sze, S. M.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.

AB - The investigation of the memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure was discussed. It was observed that the memory window was decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model to explain the reduction of dangling bonds with increasing oxygen content was also proposed. A higher breakdown voltage was observed with less oxygen content in the SiC:O film, which was attributed to the high barrier height induced by electron trapping in the SiC:O film.

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U2 - 10.1063/1.1675924

DO - 10.1063/1.1675924

M3 - Article

AN - SCOPUS:1942444674

SN - 0003-6951

VL - 84

SP - 2094

EP - 2096

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Memory effect of oxide/SiC:O/oxide sandwiched structures

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