Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang; Tse En Chang; Lu Ping Chiang; Chimoon Huang; Jyh-Chyurn Guo

doi:10.1109/VLSIT.1996.507862

Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang^*, Tse En Chang, Lu Ping Chiang, Chimoon Huang, Jyh-Chyurn Guo

^*此作品的通信作者

電子研究所

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

原文	English
頁（從 - 到）	232-233
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1996.507862
出版狀態	Published - 1 1月 1996
事件	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA 持續時間: 11 6月 1996 → 13 6月 1996

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10.1109/VLSIT.1996.507862

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abstract = "Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.",

author = "Ta-Hui Wang and Chang, {Tse En} and Chiang, {Lu Ping} and Chimoon Huang and Jyh-Chyurn Guo",

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AU - Wang, Ta-Hui

AU - Chang, Tse En

AU - Chiang, Lu Ping

AU - Huang, Chimoon

AU - Guo, Jyh-Chyurn

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

AB - Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

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M3 - Conference article

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JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

Y2 - 11 June 1996 through 13 June 1996

ER -

Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

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