Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.
|頁（從 - 到）||232-233|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 1月 1996|
|事件||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
持續時間: 11 6月 1996 → 13 6月 1996