Mechanism of stress induced leakage current in Si3N4

V. A. Gritsenko, A. A. Gismatulin, A. P. Baraban, Albert Chin

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, the experimental current density versus electric field characteristics of Si3N4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si3N4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si3N4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si3N4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si3N4.

原文English
文章編號076401
期刊Materials Research Express
6
發行號7
DOIs
出版狀態Published - 3 4月 2019

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