@inproceedings{5aee363b0b6f4e4e9e8d403f664e8c31,
title = "Mechanism of snapback failure induced by the latch-up test in high-voltage CMOS integrated circuits",
abstract = "An electrical overstress failure induced by a latch-up test is studied in high-voltage integrated circuits. The latchup test resulted in damage to the output NMOSFET due to snapback and also resulted in a latchup in the internal circuits. These mechanisms are analyzed and solutions are proposed to avoid the triggering of the output NMOSFET and the resulting latchup issue.",
keywords = "EOS, ESD, High-voltage, Latch-up",
author = "Tseng, {Jen Chou} and Chen, {Yu Lin} and Hsu, {Chung Ti} and Tsai, {Fu Yi} and Chen, {Po An} and Ming-Dou Ker",
year = "2008",
month = sep,
day = "17",
doi = "10.1109/RELPHY.2008.4558958",
language = "English",
isbn = "9781424420506",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "625--626",
booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",
note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",
}