Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Tien-Sheng Chao*, M. C. Liaw, C. H. Chu, C. Y. Chang, Chao-Hsin Chien, C. P. Hao, T. F. Lei

*此作品的通信作者

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.

原文English
頁(從 - 到)1781-1782
頁數2
期刊Applied Physics Letters
69
發行號12
DOIs
出版狀態Published - 16 9月 1996

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