@article{32e708865c9a47b9a34f4321adcdf0b0,
title = "Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor",
abstract = "The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.",
author = "Tien-Sheng Chao and Liaw, {M. C.} and Chu, {C. H.} and Chang, {C. Y.} and Chao-Hsin Chien and Hao, {C. P.} and Lei, {T. F.}",
year = "1996",
month = sep,
day = "16",
doi = "10.1063/1.117484",
language = "English",
volume = "69",
pages = "1781--1782",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "12",
}