Mechanism of high temperature retention property (up to 200 °c) in ZrO2-based memory device with inserting a zno thin layer

Umesh Chand; Chun Yang Huang; Tseung-Yuen Tseng

doi:10.1109/LED.2014.2345782

Mechanism of high temperature retention property (up to 200 °c) in ZrO₂-based memory device with inserting a zno thin layer

Umesh Chand^*, Chun Yang Huang, Tseung-Yuen Tseng

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電子研究所

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

摘要

In this letter, the switching mechanism of the ZrO₂-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO₂ layer. Compared with ZrO₂ film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiO_x, ZrO₂, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiO_x.

原文	English
文章編號	6879276
頁（從 - 到）	1019-1021
頁數	3
期刊	Ieee Electron Device Letters
卷	35
發行號	10
DOIs	https://doi.org/10.1109/LED.2014.2345782
出版狀態	Published - 1 10月 2014

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10.1109/LED.2014.2345782

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引用此

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title = "Mechanism of high temperature retention property (up to 200 °c) in ZrO2-based memory device with inserting a zno thin layer",

abstract = "In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiOx.",

keywords = "Double layer, Gibbs free energy, Resistive switching, Rram, Zno, Zro",

author = "Umesh Chand and Huang, {Chun Yang} and Tseung-Yuen Tseng",

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N2 - In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiOx.

AB - In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiOx.

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Mechanism of high temperature retention property (up to 200 °c) in ZrO2-based memory device with inserting a zno thin layer

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Mechanism of high temperature retention property (up to 200 °c) in ZrO₂-based memory device with inserting a zno thin layer