Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

Bing Yue Tsui*, Yu Chen Chang, Yi Ju Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.

原文English
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面74-75
頁數2
ISBN(電子)9781728142326
DOIs
出版狀態Published - 8月 2020
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
持續時間: 10 8月 202013 8月 2020

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區Taiwan
城市Hsinchu
期間10/08/2013/08/20

指紋

深入研究「Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery」主題。共同形成了獨特的指紋。

引用此