Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai*, C. W. Tsai, C. T. Yen, C. L. Liu, S. Y. Lee, H. M. Lien, S. L. Lung, Chao-Hsin Chien, T. B. Wu, Ta-Hui Wang, Rich Liu, C. Y. Lu

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Material Science