Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai; C. W. Tsai; C. T. Yen; C. L. Liu; S. Y. Lee; H. M. Lien; S. L. Lung; Chao-Hsin Chien; T. B. Wu; Ta-Hui Wang; Rich Liu; C. Y. Lu

doi:10.1109/IPFA.2004.1345565

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai^*, C. W. Tsai, C. T. Yen, C. L. Liu, S. Y. Lee, H. M. Lien, S. L. Lung, Chao-Hsin Chien, T. B. Wu, Ta-Hui Wang, Rich Liu, C. Y. Lu

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

摘要

Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

原文	English
頁面	123-126
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2004.1345565
出版狀態	Published - 7月 2004
事件	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣持續時間: 5 7月 2004 → 8 7月 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家/地區	台灣
期間	5/07/04 → 8/07/04

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10.1109/IPFA.2004.1345565

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Lai, S. C., Tsai, C. W., Yen, C. T., Liu, C. L., Lee, S. Y., Lien, H. M., Lung, S. L., Chien, C.-H., Wu, T. B., Wang, T.-H., Liu, R., & Lu, C. Y. (2004). Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory. 123-126. 論文發表於 Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, 台灣. https://doi.org/10.1109/IPFA.2004.1345565

@conference{e4576ed0d9de4cb7948be865941020a3,

title = "Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory",

abstract = "Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.",

author = "Lai, {S. C.} and Tsai, {C. W.} and Yen, {C. T.} and Liu, {C. L.} and Lee, {S. Y.} and Lien, {H. M.} and Lung, {S. L.} and Chao-Hsin Chien and Wu, {T. B.} and Ta-Hui Wang and Rich Liu and Lu, {C. Y.}",

year = "2004",

month = jul,

doi = "10.1109/IPFA.2004.1345565",

language = "English",

pages = "123--126",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Lai, SC, Tsai, CW, Yen, CT, Liu, CL, Lee, SY, Lien, HM, Lung, SL, Chien, C-H, Wu, TB, Wang, T-H, Liu, R & Lu, CY 2004, 'Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory', 論文發表於 Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, 台灣, 5/07/04 - 8/07/04 頁 123-126. https://doi.org/10.1109/IPFA.2004.1345565

TY - CONF

T1 - Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

AU - Lai, S. C.

AU - Tsai, C. W.

AU - Yen, C. T.

AU - Liu, C. L.

AU - Lee, S. Y.

AU - Lien, H. M.

AU - Lung, S. L.

AU - Chien, Chao-Hsin

AU - Wu, T. B.

AU - Wang, Ta-Hui

AU - Liu, Rich

AU - Lu, C. Y.

PY - 2004/7

Y1 - 2004/7

N2 - Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

AB - Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

UR - http://www.scopus.com/inward/record.url?scp=20044362189&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2004.1345565

DO - 10.1109/IPFA.2004.1345565

M3 - Paper

AN - SCOPUS:20044362189

SP - 123

EP - 126

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

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