Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.
|出版狀態||Published - 7月 2004|
|事件||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
持續時間: 5 7月 2004 → 8 7月 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|期間||5/07/04 → 8/07/04|