Mechanism and modeling of ring pattern formation for electron beam exposure on zwitterresist

Jem Kun Chen, Fu-Hsiang Ko*, Feng Chih Chang, Hsuen Li Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The first application of simultaneous patterning technology on positive and negative tones in lithography has been reported previously. In a further study, we find that the relationship between the applied doses and the obtained ring width does not exhibit linearity, irrespective of the design radius in the center dot. The observation suggests that the assumption of only using the scattering effect in explaining the ring width needs to be improved. At higher electron doses, the heating effect from center area also plays important role.

原文English
主出版物標題2002 International Microprocesses and Nanotechnology Conference, MNC 2002
發行者Institute of Electrical and Electronics Engineers Inc.
頁面110-111
頁數2
ISBN(電子)4891140313, 9784891140311
DOIs
出版狀態Published - 1 1月 2002
事件International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
持續時間: 6 11月 20028 11月 2002

出版系列

名字2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2002
國家/地區Japan
城市Tokyo
期間6/11/028/11/02

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