Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy

Yi Chou, Chanho Lee, Peter K. Liaw, Yi Chia Chou*

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摘要

High annular angle dark field-scanning transmission electron microscopy (HAADF-STEM) was used to directly measure the lattice distortion of NbTaTiV and NbTaTiVZr by fitting the images with a two-dimensional (2-D) Gauss function. The effect of the scanning direction and the accuracy of the HAADF-STEM method were discussed, and the lattice distortion factors in NbTaTiV and NbTaTiVZr were 0.113 and 0.155 Å, respectively.

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