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Machine Learning Approach to Characteristic Fluctuation of Bulk FinFETs Induced by Random Interface Traps
Rajat Butola,
Yiming Li
*
, Sekhar Reddy Kola
*
此作品的通信作者
電信工程研究所
研究成果
:
Conference contribution
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同行評審
3
引文 斯高帕斯(Scopus)
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Keyphrases
Fin Field-effect Transistor (FinFET)
100%
Interface Traps
100%
Machine Learning Approach
100%
Characteristic Fluctuation
100%
Random Interface Trap
100%
Device Characteristics
50%
Machine Learning Models
50%
Subthreshold Slope
25%
Metal Gate
25%
Off-state Current
25%
Transconductance
25%
Adverse Effects
25%
Computational Cost
25%
Charge Carriers
25%
Gate Oxide
25%
Drain Induced Barrier Lowering
25%
Machine Learning
25%
Threshold Voltage
25%
Downscaling
25%
Detrapping
25%
Statistical Fluctuations
25%
Semiconductor Devices
25%
Device Simulation
25%
Random Defects
25%
Device Variability
25%
Defect Analysis
25%
Multipoint
25%
Engineering
Field-Effect Transistor
100%
Learning Approach
100%
Learning System
100%
Interface Trap
100%
Simulation Result
20%
Subthreshold Slope
20%
Metal Gate
20%
Gate Oxide
20%
Computational Cost
20%
Semiconductor Device
20%
Random Defect
20%
Simulated Data
20%
Charge Carrier
20%
Material Science
Field Effect Transistor
100%
Oxide Compound
33%
Silicon
33%
Charge Carrier
33%
Semiconductor Device
33%
Point Defect
33%