MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al 2O3 blocking layer to overcome erase saturation

Sheng Chih Lai; Hang Ting Lue; Ming Jui Yang; Jung Yu Hsieh; Szu Yu Wang; Tai Bor Wu; Guang Li Luo; Chao-Hsin Chien; Erh Kun Lai; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/NVSMW.2007.4290593

MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation

Sheng Chih Lai^*, Hang Ting Lue, Ming Jui Yang, Jung Yu Hsieh, Szu Yu Wang, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

32 引文斯高帕斯（Scopus）

摘要

A bandgap engineered SONOS (BE-SONOS) [1] using Al₂O₃ top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P⁺-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al ₂O₃ blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

原文	English
主出版物標題	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW
頁面	88-89
頁數	2
DOIs	https://doi.org/10.1109/NVSMW.2007.4290593
出版狀態	Published - 2007
事件	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW - Monterey, CA, 美國持續時間: 26 8月 2007 → 30 8月 2007

出版系列

名字	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Conference

Conference	2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW
國家/地區	美國
城市	Monterey, CA
期間	26/08/07 → 30/08/07

存取文件

10.1109/NVSMW.2007.4290593

其它文件與鏈接

Link to publication in Scopus

引用此

Lai, S. C., Lue, H. T., Yang, M. J., Hsieh, J. Y., Wang, S. Y., Wu, T. B., Luo, G. L., Chien, C.-H., Lai, E. K., Hsieh, K. Y., Liu, R., & Lu, C. Y. (2007). MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. 於 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW (頁 88-89). 文章 4290593 (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW). https://doi.org/10.1109/NVSMW.2007.4290593

@inproceedings{d89aa105f7444b7c9da01f8f215c24a4,

title = "MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al 2O3 blocking layer to overcome erase saturation",

abstract = "A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.",

author = "Lai, {Sheng Chih} and Lue, {Hang Ting} and Yang, {Ming Jui} and Hsieh, {Jung Yu} and Wang, {Szu Yu} and Wu, {Tai Bor} and Luo, {Guang Li} and Chao-Hsin Chien and Lai, {Erh Kun} and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2007",

doi = "10.1109/NVSMW.2007.4290593",

language = "English",

isbn = "1424407532",

series = "2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW",

pages = "88--89",

booktitle = "2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW",

note = "2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW ; Conference date: 26-08-2007 Through 30-08-2007",

}

Lai, SC, Lue, HT, Yang, MJ, Hsieh, JY, Wang, SY, Wu, TB, Luo, GL, Chien, C-H, Lai, EK, Hsieh, KY, Liu, R & Lu, CY 2007, MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. 於 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW., 4290593, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW, 頁 88-89, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW, Monterey, CA, 美國, 26/08/07. https://doi.org/10.1109/NVSMW.2007.4290593

MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. / Lai, Sheng Chih; Lue, Hang Ting; Yang, Ming Jui 等.
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW. 2007. p. 88-89 4290593 (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW).

研究成果: Conference contribution › 同行評審

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T2 - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW

AU - Lai, Sheng Chih

AU - Lue, Hang Ting

AU - Yang, Ming Jui

AU - Hsieh, Jung Yu

AU - Wang, Szu Yu

AU - Wu, Tai Bor

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Lai, Erh Kun

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2007

Y1 - 2007

N2 - A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

AB - A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

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U2 - 10.1109/NVSMW.2007.4290593

DO - 10.1109/NVSMW.2007.4290593

M3 - Conference contribution

AN - SCOPUS:48649095167

SN - 1424407532

SN - 9781424407538

T3 - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

SP - 88

EP - 89

BT - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Y2 - 26 August 2007 through 30 August 2007

ER -

Lai SC, Lue HT, Yang MJ, Hsieh JY, Wang SY, Wu TB 等. MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al ₂O₃ blocking layer to overcome erase saturation. 於 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW. 2007. p. 88-89. 4290593. (2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW). doi: 10.1109/NVSMW.2007.4290593