Luminescence properties of wurtzite AlN nanotips

Shih Chen Shi; Chia Fu Chen; Surojit Chattopadhyay; Kuei Hsien Chen; Bo Wen Ke; Li Chyong Chen; Laima Trinkler; Baiba Berzina

doi:10.1063/1.2364158

Luminescence properties of wurtzite AlN nanotips

Shih Chen Shi, Chia Fu Chen, Surojit Chattopadhyay^*, Kuei Hsien Chen, Bo Wen Ke, Li Chyong Chen, Laima Trinkler, Baiba Berzina

^*此作品的通信作者

生醫光電研究所

研究成果: Article › 同行評審

49 引文斯高帕斯（Scopus）

摘要

The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the ∼3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 °C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

原文	English
文章編號	163127
期刊	Applied Physics Letters
卷	89
發行號	16
DOIs	https://doi.org/10.1063/1.2364158
出版狀態	Published - 2006

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title = "Luminescence properties of wurtzite AlN nanotips",

abstract = "The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the ∼3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 °C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.",

author = "Shi, {Shih Chen} and Chen, {Chia Fu} and Surojit Chattopadhyay and Chen, {Kuei Hsien} and Ke, {Bo Wen} and Chen, {Li Chyong} and Laima Trinkler and Baiba Berzina",

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T1 - Luminescence properties of wurtzite AlN nanotips

AU - Shi, Shih Chen

AU - Chen, Chia Fu

AU - Chattopadhyay, Surojit

AU - Chen, Kuei Hsien

AU - Ke, Bo Wen

AU - Chen, Li Chyong

AU - Trinkler, Laima

AU - Berzina, Baiba

PY - 2006

Y1 - 2006

N2 - The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the ∼3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 °C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

AB - The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the ∼3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 °C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

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U2 - 10.1063/1.2364158

DO - 10.1063/1.2364158

M3 - Article

AN - SCOPUS:33750156755

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163127

ER -

Luminescence properties of wurtzite AlN nanotips

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