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LPCVD of InN on GaAs(110) using HN
3
and TMIn: comparison with Si(100) results
Y. Bu
*
,
Ming-Chang Lin
*
此作品的通信作者
應用化學系
研究成果
:
Conference contribution
›
同行評審
8
引文 斯高帕斯(Scopus)
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3
and TMIn: comparison with Si(100) results」主題。共同形成了獨特的指紋。
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Keyphrases
Low Pressure Chemical Vapor Deposition (LPCVD)
100%
Indium
100%
Si(111)
100%
InN Films
100%
GaAs(110)
100%
Gallium Arsenide
50%
X-ray Photoelectron
25%
Nitrides
25%
Valence Band
25%
SEM Images
25%
Si Surface
25%
Atomic Ratio
25%
Laser-assisted
25%
Film Growth
25%
Excimer Laser Irradiation
25%
XPS-UPS
25%
XPS Spectra
25%
308-nm Excimer Laser
25%
Low-pressure Condition
25%
Pseudopotential Calculations
25%
Si(100) Surface
25%
He II
25%
Photon Beam
25%
Chemistry
Indium
100%
Low Pressure Chemical Vapor Deposition
100%
Scanning Electron Microscopy
66%
Valence Band
33%
Excimer
33%
Pseudopotential
33%
Ultra-Violet Photoelectron Spectroscopy
33%
X-Ray Photoelectron Spectrum
33%
formation
33%
Nitride
33%
Photoelectron
33%
Material Science
Gallium Arsenide
100%
Low Pressure Chemical Vapor Deposition
100%
Indium
100%
Film
80%
Surface (Surface Science)
60%
Scanning Electron Microscopy
40%
Nitride Compound
20%
Film Growth
20%
Physics
Vapor Deposition
100%
Indium
100%
Scanning Electron Microscopy
66%
X Ray Spectroscopy
66%
Photoelectron
33%
Nitride
33%
Pseudopotential
33%
Photon Beams
33%
Excimer Laser
33%
Engineering
Gallium Arsenide
100%
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Valence Band
20%
Nitride
20%
Laser Irradiation
20%
Excimer Laser
20%
Photoelectron
20%
Si Surface
20%
Pseudopotential Calculation
20%
Film Growth Process
20%