LPCVD of InN on GaAs(110) using HN3 and TMIn: comparison with Si(100) results

Y. Bu; Ming-Chang Lin

doi:10.1557/PROC-335-21

LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results

Y. Bu^*, Ming-Chang Lin

^*此作品的通信作者

應用化學系

研究成果: Conference contribution › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN₃ and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In_3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

原文	English
主出版物標題	Metal-Organic Chemical Vapor Deposition of Electronic Ceramics
編輯	Seshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
發行者	Publ by Materials Research Society
頁面	21-26
頁數	6
ISBN（列印）	1558992340
DOIs	https://doi.org/10.1557/PROC-335-21
出版狀態	Published - 1 1月 1994
事件	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA 持續時間: 29 11月 1993 → 2 12月 1993

出版系列

名字	Materials Research Society Symposium Proceedings
卷	335
ISSN（列印）	0272-9172

Conference

Conference	Proceedings of the 1993 Fall Meeting of the Materials Research Society
城市	Boston, MA, USA
期間	29/11/93 → 2/12/93

存取文件

10.1557/PROC-335-21

其它文件與鏈接

Link to publication in Scopus

引用此

Bu, Y., & Lin, M.-C. (1994). LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. 於 S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (編輯), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics (頁 21-26). (Materials Research Society Symposium Proceedings; 卷 335). Publ by Materials Research Society. https://doi.org/10.1557/PROC-335-21

@inproceedings{d573e55235134146804eeff4b9165e86,

title = "LPCVD of InN on GaAs(110) using HN3 and TMIn: comparison with Si(100) results",

abstract = "Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).",

author = "Y. Bu and Ming-Chang Lin",

year = "1994",

month = jan,

day = "1",

doi = "10.1557/PROC-335-21",

language = "English",

isbn = "1558992340",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "21--26",

editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",

booktitle = "Metal-Organic Chemical Vapor Deposition of Electronic Ceramics",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",

}

Bu, Y & Lin, M-C 1994, LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. 於 SB Desu, DB Beach, BW Wessels & S Gokoglu (編輯), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Materials Research Society Symposium Proceedings, 卷 335, Publ by Materials Research Society, 頁 21-26, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 29/11/93. https://doi.org/10.1557/PROC-335-21

LPCVD of InN on GaAs(110) using HN₃ and TMIn: comparison with Si(100) results. / Bu, Y.; Lin, Ming-Chang.
Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. 編輯 / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Publ by Materials Research Society, 1994. p. 21-26 (Materials Research Society Symposium Proceedings; 卷 335).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - LPCVD of InN on GaAs(110) using HN3 and TMIn

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

AU - Bu, Y.

AU - Lin, Ming-Chang

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

AB - Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

UR - http://www.scopus.com/inward/record.url?scp=0027931981&partnerID=8YFLogxK

U2 - 10.1557/PROC-335-21

DO - 10.1557/PROC-335-21

M3 - Conference contribution

AN - SCOPUS:0027931981

SN - 1558992340

T3 - Materials Research Society Symposium Proceedings

SP - 21

EP - 26

BT - Metal-Organic Chemical Vapor Deposition of Electronic Ceramics

A2 - Desu, Seshu B.

A2 - Beach, David B.

A2 - Wessels, Bruce W.

A2 - Gokoglu, Suleyman

PB - Publ by Materials Research Society

Y2 - 29 November 1993 through 2 December 1993

ER -