Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques

Jyh-Chyurn Guo, Ching Shiang Lin, Yu Tang Liang

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18μm CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, Vdd and Vg1 to 1.0V and 0.53V The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S21) can reach 10.55∼12.6dB and noise figure (NF50) is 3.2∼3.95 dB through the UWB (3∼10.5GHz). This UWB LNA with small chip area (0.69mm2) provides a solution of low voltages, low power, and low cost.

原文English
主出版物標題2017 IEEE MTT-S International Microwave Symposium, IMS 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面764-767
頁數4
ISBN(電子)9781509063604
DOIs
出版狀態Published - 4 10月 2017
事件2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
持續時間: 4 6月 20179 6月 2017

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
ISSN(列印)0149-645X

Conference

Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
國家/地區United States
城市Honololu
期間4/06/179/06/17

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