Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

C. T. Wan; Y. K. Su; Hsin-Chieh Yu; C. Y. Huang; W. H. Lin; W. C. Chen; H. C. Tseng; J. B. Horng; C. Hu; Seth Tsau

doi:10.1109/LPT.2009.2028654

Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

C. T. Wan^*, Y. K. Su, Hsin-Chieh Yu, C. Y. Huang, W. H. Lin, W. C. Chen, H. C. Tseng, J. B. Horng, C. Hu, Seth Tsau

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this letter, the strained In_0.22Ga_0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (α_i) and the transparency current density (J_tr) were 1.78 cm^-1 and 40.2 A/cm², respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the α_i and J_tr could be reduced to 0.63 cm^-1 and 39.1 A/cm², respectively. To the best of our knowledge, the J_tr was the lowest among the reported InGaAs lasers around 1060 nm.

原文	English
頁（從 - 到）	1474-1476
頁數	3
期刊	IEEE Photonics Technology Letters
卷	21
發行號	19
DOIs	https://doi.org/10.1109/LPT.2009.2028654
出版狀態	Published - 7 10月 2009

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10.1109/LPT.2009.2028654

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title = "Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer",

abstract = "In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.",

keywords = "InGaAs, Lasers, Metal-organic vapor phase epitaxy (MOVPE)",

author = "Wan, {C. T.} and Su, {Y. K.} and Hsin-Chieh Yu and Huang, {C. Y.} and Lin, {W. H.} and Chen, {W. C.} and Tseng, {H. C.} and Horng, {J. B.} and C. Hu and Seth Tsau",

year = "2009",

month = oct,

day = "7",

doi = "10.1109/LPT.2009.2028654",

language = "English",

volume = "21",

pages = "1474--1476",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

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TY - JOUR

T1 - Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

AU - Wan, C. T.

AU - Su, Y. K.

AU - Yu, Hsin-Chieh

AU - Huang, C. Y.

AU - Lin, W. H.

AU - Chen, W. C.

AU - Tseng, H. C.

AU - Horng, J. B.

AU - Hu, C.

AU - Tsau, Seth

PY - 2009/10/7

Y1 - 2009/10/7

N2 - In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.

AB - In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.

KW - InGaAs

KW - Lasers

KW - Metal-organic vapor phase epitaxy (MOVPE)

UR - http://www.scopus.com/inward/record.url?scp=70349600854&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2028654

DO - 10.1109/LPT.2009.2028654

M3 - Article

AN - SCOPUS:70349600854

SN - 1041-1135

VL - 21

SP - 1474

EP - 1476

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

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