Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Kuo-Jui Lin*, Pei Yin Su, Hsu Chieh Cheng

*此作品的通信作者

    研究成果: Article同行評審

    20 引文 斯高帕斯(Scopus)

    摘要

    Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm2 and no noticeable threshold jump is observed. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended to 150 nm, from 1143 to 1293 nm. The effect of cavity length on the tuning characteristics is discussed and the strategy for design and optimization of multilayer quantum-dot structure is also proposed.

    原文English
    頁(從 - 到)3941-3947
    頁數7
    期刊Optics Express
    20
    發行號4
    DOIs
    出版狀態Published - 13 2月 2012

    指紋

    深入研究「Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure」主題。共同形成了獨特的指紋。

    引用此