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Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage
Shang Yu Yu, Kuan Hsun Wang,
Hsiao-Wen Zan
, Olivier Soppera
光電工程學系
研究成果
:
Article
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同行評審
2
引文 斯高帕斯(Scopus)
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Keyphrases
Low Temperature
100%
Sol-gel
100%
Effective Mobility
100%
Oxide Thin-film Transistors
100%
Low-voltage Operation
100%
Fluoropolymer Dielectrics
100%
Silicon Nitride
33%
High Performance
33%
Dielectric
33%
Zinc Oxide Thin Films
33%
Solution Process
33%
Operation Voltage
33%
Dipole
33%
Dielectric Surface
33%
Electron Accumulation
33%
Hysteresis Effect
33%
Amorphous Indium Zinc Oxide
33%
Dipole Layer
33%
IZO Thin-film Transistors
33%
Electric Double Layer Effect
33%
Material Science
Oxide Compound
100%
Thin-Film Transistor
100%
Sol-Gel
100%
Fluoropolymer
100%
Dielectric Material
100%
Silicon Nitride
20%
Zinc Oxide
20%
Indium
20%
Surface (Surface Science)
20%
Chemical Engineering
Fluorine Containing Polymer
100%
Film
100%
Indium
33%
Zinc Oxide
33%
Silicon Nitride
33%