摘要
In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.
原文 | English |
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文章編號 | 060303 |
期刊 | Japanese journal of applied physics |
卷 | 56 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 6月 2017 |