Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

Shang Yu Yu, Kuan Hsun Wang, Hsiao-Wen Zan, Olivier Soppera

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.

原文English
文章編號060303
期刊Japanese Journal of Applied Physics
56
發行號6
DOIs
出版狀態Published - 1 六月 2017

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