Low temperature SER and noise in a high speed DRAM

W. H. Henkels; N. C.C. Lu; Wei Hwang; T. V. Rajeevakumar; R. L. Franch; K. A. Jenkins; T. J. Bucelot; D. F. Heidel; M. J. Immediato

doi:10.1109/LTSE.1989.50171

Low temperature SER and noise in a high speed DRAM

W. H. Henkels^*, N. C.C. Lu, Wei Hwang, T. V. Rajeevakumar, R. L. Franch, K. A. Jenkins, T. J. Bucelot, D. F. Heidel, M. J. Immediato

^*此作品的通信作者

國際半導體產業學院

研究成果: Paper › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.

原文	English
頁面	5-9
頁數	5
DOIs	https://doi.org/10.1109/LTSE.1989.50171
出版狀態	Published - 1 12月 1989
事件	Proceedings of the Workshop on Low Temperature Semiconductor Electronics 1989 - Burlington, VT, USA 持續時間: 7 8月 1989 → 8 8月 1989

Conference

Conference	Proceedings of the Workshop on Low Temperature Semiconductor Electronics 1989
城市	Burlington, VT, USA
期間	7/08/89 → 8/08/89

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10.1109/LTSE.1989.50171

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title = "Low temperature SER and noise in a high speed DRAM",

abstract = "The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.",

author = "Henkels, {W. H.} and Lu, {N. C.C.} and Wei Hwang and Rajeevakumar, {T. V.} and Franch, {R. L.} and Jenkins, {K. A.} and Bucelot, {T. J.} and Heidel, {D. F.} and Immediato, {M. J.}",

year = "1989",

month = dec,

day = "1",

doi = "10.1109/LTSE.1989.50171",

language = "English",

pages = "5--9",

note = "null ; Conference date: 07-08-1989 Through 08-08-1989",

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T1 - Low temperature SER and noise in a high speed DRAM

AU - Henkels, W. H.

AU - Lu, N. C.C.

AU - Hwang, Wei

AU - Rajeevakumar, T. V.

AU - Franch, R. L.

AU - Jenkins, K. A.

AU - Bucelot, T. J.

AU - Heidel, D. F.

AU - Immediato, M. J.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.

AB - The soft error rate (SER) and power bus noise were measured for a high-speed 512 kb CMOS DRAM (dynamic random access memory) operated at liquid-nitrogen temperatures. The SER decreased by about 3-20 times, depending upon cycle time and data type, and the power bus noise increased, but only modestly, at low temperature. These results show that the noise and SER do not preclude high-speed cryogenic DRAM operation. Compensation of increased inductive noise by decreased resistive noise is found to be a significant advantage in obtaining speed improvement by temperature reduction, rather than by room-temperature circuit and device techniques.

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U2 - 10.1109/LTSE.1989.50171

DO - 10.1109/LTSE.1989.50171

M3 - Paper

AN - SCOPUS:0024880911

SP - 5

EP - 9

Y2 - 7 August 1989 through 8 August 1989

ER -

Low temperature SER and noise in a high speed DRAM

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