摘要
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.
原文 | English |
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文章編號 | 8700493 |
頁(從 - 到) | 909-912 |
頁數 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 40 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 1 6月 2019 |