Low-Temperature Processed Tin Oxide Transistor with Ultraviolet Irradiation

Cheng Wei Shih*, Te Jui Yen, Albert Chin, Chun Fu Lu, Wei Fang Su

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm2/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/ OFF-current values of 3\times 10^{6} and 7\times 10^{5} was achieved for the SnO2 TFT at low processing temperatures of 180 °C and 100 °C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.

原文English
文章編號8700493
頁(從 - 到)909-912
頁數4
期刊IEEE Electron Device Letters
40
發行號6
DOIs
出版狀態Published - 1 6月 2019

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