Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

Yi Hsuan Chen, Li Chen Yen, Tien Shun Chang, Tsung Yu Chiang, Po Yi Kuo, Tien-Sheng Chao

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV decade, than the other T-TFTs and a high ON/OFF ratio >10 6 at VDS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

原文English
文章編號6544264
頁(從 - 到)1017-1019
頁數3
期刊IEEE Electron Device Letters
34
發行號8
DOIs
出版狀態Published - 7 8月 2013

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