Low-temperature photo imageable dielectric for redistribution layers in advanced packaging application

This study investigates the low-temperature photo imageable dielectric (LT-PID) as a next-generation material for redistribution layers (RDLs) in advanced packaging applications, with a focus on high-performance computing (HPC) and Artificial Intelligence (AI). LT-PID provides several critical advantages, including exceptionally low curing shrinkage, superior adhesion to key substrates such as silicon (Si), silicon oxide (SiO_x), silicon nitride (SiN_x), and copper (Cu), and robust thermal stability at lower processing temperatures. These properties make LT-PID an excellent candidate for enhancing the mechanical stability and reliability of fine-pitch interposers, a crucial requirement for heterogeneous integration in advanced packaging technologies. In addition, the optimization of lithography and plasma descum processes has shown that LT-PID contributes to improved contact resistance and uniform surface morphology. The use of O₂/SF₆ plasma descum significantly reduces via-bottom residue, further enhancing the electrical performance of Cu interconnects.