Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee; Akio Higo; Cédric Thomas; Takeru Okada; Takuya Ozaki; Masakazu Sugiyama; Yoshiaki Nakano; Seiji Samukawa

doi:10.7567/JJAP.57.070305

Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee, Akio Higo, Cédric Thomas, Takeru Okada, Takuya Ozaki, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa^*

^*此作品的通信作者

電信工程研究所

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1 引文斯高帕斯（Scopus）

摘要

The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

原文	English
文章編號	070305
期刊	Japanese journal of applied physics
卷	57
發行號	7
DOIs	https://doi.org/10.7567/JJAP.57.070305
出版狀態	Published - 7月 2018

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title = "Low-temperature InGaAs oxidation using oxygen neutral beam",

abstract = "The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.",

author = "Lee, {Chang Yong} and Akio Higo and C{\'e}dric Thomas and Takeru Okada and Takuya Ozaki and Masakazu Sugiyama and Yoshiaki Nakano and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

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doi = "10.7567/JJAP.57.070305",

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T1 - Low-temperature InGaAs oxidation using oxygen neutral beam

AU - Lee, Chang Yong

AU - Higo, Akio

AU - Thomas, Cédric

AU - Okada, Takeru

AU - Ozaki, Takuya

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

AU - Samukawa, Seiji

PY - 2018/7

Y1 - 2018/7

N2 - The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

AB - The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

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DO - 10.7567/JJAP.57.070305

M3 - Article

AN - SCOPUS:85049400624

SN - 0021-4922

VL - 57

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 7

M1 - 070305

ER -

Low-temperature InGaAs oxidation using oxygen neutral beam

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