Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Chih Tsung Tsai; Ting Chang Chang; Po-Tsun Liu; Yi Li Cheng; Fon Shan Huang

doi:10.1063/1.2957655

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Chih Tsung Tsai^*, Ting Chang Chang, Po-Tsun Liu, Yi Li Cheng, Fon Shan Huang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

原文	English
文章編號	052903
頁數	3
期刊	Applied Physics Letters
卷	93
發行號	5
DOIs	https://doi.org/10.1063/1.2957655
出版狀態	Published - 2008

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AU - Huang, Fon Shan

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AB - In this work, the supercritical C O2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (Si Ox) film at 150 °C. After the proposed treatment, the Si Ox film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 102 times and the retention time attains to 2× 103 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

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Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

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