Low-temperature hole mobility anomaly in compensated p-channel metal-oxide-semiconductor field-effect transistor

Wei Lee Lu, Jyh-Chyurn Guo, Chin Hsin Kao, Charles Ching-Hsiang Hsu, Luke Su Lu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

An anomalous hole mobility degradation effect at low temperature and low gate overdrive of a compensated p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is reported. Measurements are performed with great care, including the temperature calibration of the device and measurement timing control to exclude unwanted self-heating effect. Methods to determine threshold voltage and effective mobility are discussed. The anomalous effect can be explained by the trapping or freezing out of the electrons ionized from donor level at the acceptor site. The additional charged center enhances the Coulomb scattering of conducting holes that are transported in this region.

原文English
頁(從 - 到)3413-3417
頁數5
期刊Japanese journal of applied physics
34
發行號7R
DOIs
出版狀態Published - 7月 1995

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