Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition

Jyh-Cheng Chen*, P. Bush, Wei-Kuo Chen, Pao Lo Liu

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185°C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240°C are stoichiometric, single crystal, and of specular surface morphology.

原文English
頁(從 - 到)773-775
頁數3
期刊Applied Physics Letters
53
發行號9
DOIs
出版狀態Published - 1 12月 1988

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