Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

T. P. Chen*, T. F. Lei, Horng-Chih Lin, C. Y. Chang, W. Y. Hsieh, L. J. Chen

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H 6 (1% in H2). The growth temperature was as low as 550°C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×10 22 cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.

原文English
頁(從 - 到)1853-1855
頁數3
期刊Applied Physics Letters
64
發行號14
DOIs
出版狀態Published - 1994

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