Low-Temperature Growth of Silicon-Boron Layer as Solid Diffusion Source for Polysilicon Contacted p+ -n Shallow Junction

Tan Fu Lei, Tung Po Chen, Horng-Chih Lin, Chun Yen Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p+-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF+2 -implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode. This was attributed to the smaller surface concentration - and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm2 at -5 V were obtained. As the junction depth shrank to 300 Å the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm2, respectively. These results demonstrated that a uniform ultra-shallow p+ -n junction can be obtained by using a thin Si-B layer as a diffusion source.

原文English
頁(從 - 到)2104-2110
頁數7
期刊IEEE Transactions on Electron Devices
42
發行號12
DOIs
出版狀態Published - 12月 1995

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