Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Tz Guei Jung; Chun Yen Chang; Ting Chang Chang; Horng-Chih Lin; Tom Wang; Wen Chung Tsai; Guo Wei Huang

doi:10.1143/JJAP.33.240

Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Tz Guei Jung, Chun Yen Chang, Ting Chang Chang, Horng-Chih Lin, Tom Wang, Wen Chung Tsai, Guo Wei Huang

電子研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

原文	English
頁（從 - 到）	240
頁數	1
期刊	Japanese journal of applied physics
卷	33
發行號	1R
DOIs	https://doi.org/10.1143/JJAP.33.240
出版狀態	Published - 1月 1994

存取文件

10.1143/JJAP.33.240

其它文件與鏈接

Link to publication in Scopus

引用此

@article{f43ec254d33943d292f083a591b66e2f,

title = "Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition",

abstract = "Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.",

author = "Jung, {Tz Guei} and Chang, {Chun Yen} and Chang, {Ting Chang} and Horng-Chih Lin and Tom Wang and Tsai, {Wen Chung} and Huang, {Guo Wei}",

year = "1994",

month = jan,

doi = "10.1143/JJAP.33.240",

language = "English",

volume = "33",

pages = "240",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1R",

}

TY - JOUR

T1 - Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

AU - Jung, Tz Guei

AU - Chang, Chun Yen

AU - Chang, Ting Chang

AU - Lin, Horng-Chih

AU - Wang, Tom

AU - Tsai, Wen Chung

AU - Huang, Guo Wei

PY - 1994/1

Y1 - 1994/1

N2 - Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

AB - Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

UR - http://www.scopus.com/inward/record.url?scp=0028336155&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.240

DO - 10.1143/JJAP.33.240

M3 - Article

AN - SCOPUS:0028336155

SN - 0021-4922

VL - 33

SP - 240

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 1R

ER -

Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

摘要

存取文件

其它文件與鏈接

指紋

引用此