Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

S. L. Lung; C. L. Liu; S. S. Chen; S. C. Lai; C. W. Tsai; T. T. Sheng; Ta-Hui Wang; Sam Pan; T. B. Wu; Rich Liu

doi:10.1109/IEDM.2001.979483

Low temperature epitaxial growth of PZT on conductive perovskite LaNiO ₃ electrode for embedded capacitor-over-interconnect (COI) FeRAM application

S. L. Lung, C. L. Liu^*, S. S. Chen, S. C. Lai, C. W. Tsai, T. T. Sheng, Ta-Hui Wang, Sam Pan, T. B. Wu, Rich Liu

^*此作品的通信作者

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

By using a conductive perovskite LaNiO ₃ (LNO) bottom electrode as seed layer, the crystallization temperature of in-situ sputter deposited PZT has been greatly reduced from 600°C to 350°C∼400°C. LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. The 2Pr value of the low temperature grown PZT is about 20 μC/cm ² , and this provides 130mV-400mV sense margin when bit line capacitance is 800fF. When Pt is used as the top electrode, an amorphous layer, which degrades the electric fatigue performance, is found at the interface of Pt and PZT. When the top electrode is replaced by LNO, the thickness of the amorphous layer is decreased, and fatigue is improved. COI FeRAM structure can be easily achieved by this low temperature capacitor process, and is suitable for advanced Cu/low-K embedded logic application.

原文	English
頁（從 - 到）	275-278
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979483
出版狀態	Published - 1 12月 2001
事件	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, 美國持續時間: 2 12月 2001 → 5 12月 2001

存取文件

10.1109/IEDM.2001.979483

其它文件與鏈接

Link to publication in Scopus

引用此

Lung, S. L., Liu, C. L., Chen, S. S., Lai, S. C., Tsai, C. W., Sheng, T. T., Wang, T.-H., Pan, S., Wu, T. B., & Liu, R. (2001). Low temperature epitaxial growth of PZT on conductive perovskite LaNiO ₃ electrode for embedded capacitor-over-interconnect (COI) FeRAM application. Technical Digest - International Electron Devices Meeting, 275-278. https://doi.org/10.1109/IEDM.2001.979483

@article{60c51db8fb2c4d44b11484857e60126a,

title = "Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application",

abstract = " By using a conductive perovskite LaNiO 3 (LNO) bottom electrode as seed layer, the crystallization temperature of in-situ sputter deposited PZT has been greatly reduced from 600°C to 350°C∼400°C. LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. The 2Pr value of the low temperature grown PZT is about 20 μC/cm 2 , and this provides 130mV-400mV sense margin when bit line capacitance is 800fF. When Pt is used as the top electrode, an amorphous layer, which degrades the electric fatigue performance, is found at the interface of Pt and PZT. When the top electrode is replaced by LNO, the thickness of the amorphous layer is decreased, and fatigue is improved. COI FeRAM structure can be easily achieved by this low temperature capacitor process, and is suitable for advanced Cu/low-K embedded logic application. ",

author = "Lung, {S. L.} and Liu, {C. L.} and Chen, {S. S.} and Lai, {S. C.} and Tsai, {C. W.} and Sheng, {T. T.} and Ta-Hui Wang and Sam Pan and Wu, {T. B.} and Rich Liu",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/IEDM.2001.979483",

language = "English",

pages = "275--278",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

AU - Lung, S. L.

AU - Liu, C. L.

AU - Chen, S. S.

AU - Lai, S. C.

AU - Tsai, C. W.

AU - Sheng, T. T.

AU - Wang, Ta-Hui

AU - Pan, Sam

AU - Wu, T. B.

AU - Liu, Rich

PY - 2001/12/1

Y1 - 2001/12/1

N2 - By using a conductive perovskite LaNiO 3 (LNO) bottom electrode as seed layer, the crystallization temperature of in-situ sputter deposited PZT has been greatly reduced from 600°C to 350°C∼400°C. LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. The 2Pr value of the low temperature grown PZT is about 20 μC/cm 2 , and this provides 130mV-400mV sense margin when bit line capacitance is 800fF. When Pt is used as the top electrode, an amorphous layer, which degrades the electric fatigue performance, is found at the interface of Pt and PZT. When the top electrode is replaced by LNO, the thickness of the amorphous layer is decreased, and fatigue is improved. COI FeRAM structure can be easily achieved by this low temperature capacitor process, and is suitable for advanced Cu/low-K embedded logic application.

AB - By using a conductive perovskite LaNiO 3 (LNO) bottom electrode as seed layer, the crystallization temperature of in-situ sputter deposited PZT has been greatly reduced from 600°C to 350°C∼400°C. LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. The 2Pr value of the low temperature grown PZT is about 20 μC/cm 2 , and this provides 130mV-400mV sense margin when bit line capacitance is 800fF. When Pt is used as the top electrode, an amorphous layer, which degrades the electric fatigue performance, is found at the interface of Pt and PZT. When the top electrode is replaced by LNO, the thickness of the amorphous layer is decreased, and fatigue is improved. COI FeRAM structure can be easily achieved by this low temperature capacitor process, and is suitable for advanced Cu/low-K embedded logic application.

UR - http://www.scopus.com/inward/record.url?scp=0035714334&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979483

DO - 10.1109/IEDM.2001.979483

M3 - Conference article

AN - SCOPUS:0035714334

SN - 0163-1918

SP - 275

EP - 278

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

摘要

存取文件

其它文件與鏈接

指紋

引用此

Low temperature epitaxial growth of PZT on conductive perovskite LaNiO ₃ electrode for embedded capacitor-over-interconnect (COI) FeRAM application