Low temperature epitaxial growth of indium phosphide

Wei-Kuo Chen; S. L. Yang; Pao Lo Liu

doi:10.1109/ICIPRM.1990.202998

Low temperature epitaxial growth of indium phosphide

Wei-Kuo Chen^*, S. L. Yang, Pao Lo Liu

^*此作品的通信作者

電子物理學系

研究成果: Paper › 同行評審

摘要

Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330°C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth system was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e., from 330°C to 450°C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.

原文	English
頁面	116-119
頁數	4
DOIs	https://doi.org/10.1109/ICIPRM.1990.202998
出版狀態	Published - 23 4月 1990
事件	Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA 持續時間: 23 4月 1990 → 25 4月 1990

Conference

Conference	Second International Conference on Indium Phosphide and Related Materials
城市	Denver, CO, USA
期間	23/04/90 → 25/04/90

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10.1109/ICIPRM.1990.202998

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title = "Low temperature epitaxial growth of indium phosphide",

abstract = "Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330°C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth system was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e., from 330°C to 450°C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.",

author = "Wei-Kuo Chen and Yang, {S. L.} and Liu, {Pao Lo}",

year = "1990",

month = apr,

day = "23",

doi = "10.1109/ICIPRM.1990.202998",

language = "English",

pages = "116--119",

note = "Second International Conference on Indium Phosphide and Related Materials ; Conference date: 23-04-1990 Through 25-04-1990",

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TY - CONF

T1 - Low temperature epitaxial growth of indium phosphide

AU - Chen, Wei-Kuo

AU - Yang, S. L.

AU - Liu, Pao Lo

PY - 1990/4/23

Y1 - 1990/4/23

N2 - Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330°C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth system was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e., from 330°C to 450°C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.

AB - Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330°C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth system was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport-limited and kinetic-limited regimes was observed, indicating that the highly reactive alkyl used greatly enhanced the surface reaction. The growth rate was probably limited by the supply of active reactants. Compared to the nominal FME growth process, the electron mobility was improved by a factor of two for InP homolayers grown at lower growth temperatures, i.e., from 330°C to 450°C. It was improved nearly sixfold in the case of InP/GaAs heteroepitaxial layers.

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U2 - 10.1109/ICIPRM.1990.202998

DO - 10.1109/ICIPRM.1990.202998

M3 - Paper

AN - SCOPUS:0025566417

SP - 116

EP - 119

T2 - Second International Conference on Indium Phosphide and Related Materials

Y2 - 23 April 1990 through 25 April 1990

ER -

Low temperature epitaxial growth of indium phosphide

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