@inproceedings{5409e305dae3488985e8a6f8122aede2,
title = "Low Temperature Cu-Cu Bonding with Electroless Deposited Metal Passivation for Fine-Pitch 3D Packaging",
abstract = "In this study, electroplated Cu-Cu bonding with electroless plating passivation on Cu surface can be achieved at a low bonding temperature. Compared with other low temperature bonding schemes, electroplated Cu and electroless plated passivation in this work is time-saving, high throughput, and high yield. After a pretreatment process, chip-level bonding with the good bonding quality can be achieved at 180 ℃ under atmosphere. The morphology of the electroless plated passivation surface was characterized by the energy dispersive X-ray spectroscopy (EDX), and the bonding quality was investigated by the analyses of scanning electron microscope (SEM). In addition, electrical measurements were performed to evaluate the electrical properties of the bonding structure.",
keywords = "3D IC, Chip-to-chip bonding, Electroless plating, Low temperature bonding",
author = "Huang, {Yuan Chiu} and Demin Liu and Kuma Hsiung and Chou, {Tzu Chieh} and Hu, {Han Wen} and Arvind Sundarrajan and Chang, {Hsin Chi} and Pan, {Yi Yu} and Weng, {Ming Wei} and Chen, {Kuan Neng}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 71st IEEE Electronic Components and Technology Conference, ECTC 2021 ; Conference date: 01-06-2021 Through 04-07-2021",
year = "2021",
doi = "10.1109/ECTC32696.2021.00070",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "377--382",
booktitle = "Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021",
address = "美國",
}