摘要
Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu 7In3 phases with high melting temperature of 388.3°C and 632.2°C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3× 10-8 Ω-cm2. In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.
原文 | English |
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文章編號 | 6744574 |
頁(從 - 到) | 1131-1136 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 61 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 1月 2014 |