Low Schottky barrier of rare-earth silicide on n-Si

King-Ning Tu*, R. D. Thompson, B. Y. Tsaur

*此作品的通信作者

研究成果: Article同行評審

331 引文 斯高帕斯(Scopus)

摘要

Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350°C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky-barrier heights of about 0.4 eV on n-Si and 0.7 eV on p-Si were determined.

原文English
頁(從 - 到)626-628
頁數3
期刊Applied Physics Letters
38
發行號8
DOIs
出版狀態Published - 1 12月 1981

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