Low RF noise and power loss for ion-implanted Si having an improved implantation process

K. T. Chan*, Albert Chin, S. P. McAlister, Chi-Yang Chang, J. Liu, S. C. Chien, D. S. Duh, W. J. Lin

*此作品的通信作者

研究成果: Letter同行評審

18 引文 斯高帕斯(Scopus)

摘要

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss ≤0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of ∼4 MeV. This enables easier process integration into current VLSI technology.

原文American English
頁(從 - 到)28-30
頁數3
期刊IEEE Electron Device Letters
24
發行號1
DOIs
出版狀態Published - 1 1月 2003

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