Low RF noise and power loss for ion-implanted Si having an improved implantation process

K. T. Chan*, Albert Chin, S. P. McAlister, Chi-Yang Chang, J. Liu, S. C. Chien, D. S. Duh, W. J. Lin

*此作品的通信作者

    研究成果: Letter同行評審

    18 引文 斯高帕斯(Scopus)

    摘要

    Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss ≤0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of ∼4 MeV. This enables easier process integration into current VLSI technology.

    原文American English
    頁(從 - 到)28-30
    頁數3
    期刊IEEE Electron Device Letters
    24
    發行號1
    DOIs
    出版狀態Published - 1 一月 2003

    指紋

    深入研究「Low RF noise and power loss for ion-implanted Si having an improved implantation process」主題。共同形成了獨特的指紋。

    引用此