Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

K. T. Chan*, Albert Chin, S. P. McAlister, Chi-Yang Chang, C. Tseng, V. Liang, J. K. Chen, S. C. Chien, D. S. Duh, W. J. Lin

*此作品的通信作者

研究成果: Conference article同行評審

21 引文 斯高帕斯(Scopus)

摘要

Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.

原文American English
頁(從 - 到)963-966
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
2
DOIs
出版狀態Published - 2003
事件2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
持續時間: 8 6月 200313 6月 2003

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