Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments

C. C. Lee*, C. P. Lee, M. H. Yeh, Wei-I Lee, C. T. Kuo

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A study was performed on the scheme for fabricating low resistance ohmic contacts to n-GaN. The effects of Argon flow rate on contact resistance for ohmic contacts to n-GaN were also presented. It was found out that the electrical characteristics of ohmic contacts would not be influenced by the effect of hydrogen passivation of dopants in n-GaN.

原文English
頁(從 - 到)1501-1504
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
發行號4
DOIs
出版狀態Published - 1 7月 2003

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