A study was performed on the scheme for fabricating low resistance ohmic contacts to n-GaN. The effects of Argon flow rate on contact resistance for ohmic contacts to n-GaN were also presented. It was found out that the electrical characteristics of ohmic contacts would not be influenced by the effect of hydrogen passivation of dopants in n-GaN.
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|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 1 7月 2003