Low Pressure Chemical Vapor Deposition of III/V‐Nitrides Using Organometallics and Hydrazoic Acid Precursors

Y. Bu*, Ming-Chang Lin

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In and Ga nitride films have been deposited on various substrates using organometallics and hydrazoic acid (HN3) as nitrogen precursor. The film deposition was carried out under low pressure (10−510 −6 Torr) and low V/III ratios (1‐10). XPS analysis indicated that the ln(Ga):N atomic ratio of unity can be easily achieved by adjusting the experimental conditions. For the growth of InN on Si(100) substrate, 308‐nm photon beam is needed to speed up the film deposition rate. He(II) UPS spectra of InN films are in good agreement with the result of a pseudo‐potential calculation for InN valence band, while the spectra of GaN compare favorably with a recent semi‐ab‐initio calculation and with the UPS results of GaN single crystal films. The bandgap of our GaN films is ∼ 3.3 cV as determined by photoluminescence and UV‐VIS absorption spectra. Raman spectra taken from GaN Films showed peaks at 66 and 88 meV for TO and LO phonons, respectively, indicating a wurtzite structure of the GaN. In a corresponding X‐ray diffraction spectrum, the (002) peak is about 400 times more intense than that of the (101) peak, suggesting that the GaN layers are highly oriented with the c‐axis normal or nearly so to the Al2O3 substrate.

原文English
頁(從 - 到)423-432
頁數10
期刊Journal of the Chinese Chemical Society
42
發行號2
DOIs
出版狀態Published - 1 一月 1995

指紋

深入研究「Low Pressure Chemical Vapor Deposition of III/V‐Nitrides Using Organometallics and Hydrazoic Acid Precursors」主題。共同形成了獨特的指紋。

引用此