Low power consumption 10-Gb/s SiGe modulator drivers with 9VPp differential output swing using intrinsic collector-base capacitance feedback network

Day Uei Li; Li Ren Huang; Chia-Ming Tsai

doi:10.1109/RFIC.2005.1489796

Low power consumption 10-Gb/s SiGe modulator drivers with 9V_Pp differential output swing using intrinsic collector-base capacitance feedback network

Day Uei Li^*, Li Ren Huang, Chia-Ming Tsai

^*此作品的通信作者

研究成果: Conference article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A novel intrinsic collector-base capacitance (C_CB) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9V_Pp differential or 4.5V_PP single-ended (S.E.) output swing with rise/fall time less than 29ps while it consumes power as low as 0.8W. The performances and simulation results compared with precedent works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the ever-reported silicon-based modulator drivers.

原文	English
文章編號	RMO4C-3
頁（從 - 到）	317-320
頁數	4
期刊	Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
DOIs	https://doi.org/10.1109/RFIC.2005.1489796
出版狀態	Published - 2005
事件	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, 美國持續時間: 12 6月 2005 → 14 6月 2005

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10.1109/RFIC.2005.1489796

其它文件與鏈接

Link to publication in Scopus

引用此

@article{bbf8e0bebf0343ba9840f7199f77cf67,

title = "Low power consumption 10-Gb/s SiGe modulator drivers with 9VPp differential output swing using intrinsic collector-base capacitance feedback network",

abstract = "A novel intrinsic collector-base capacitance (CCB) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9VPp differential or 4.5VPP single-ended (S.E.) output swing with rise/fall time less than 29ps while it consumes power as low as 0.8W. The performances and simulation results compared with precedent works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the ever-reported silicon-based modulator drivers.",

keywords = "Cascode, Feedback network, Intrinsic collector-base capacitance, Modulator drivers, SiGe",

author = "Li, {Day Uei} and Huang, {Li Ren} and Chia-Ming Tsai",

year = "2005",

doi = "10.1109/RFIC.2005.1489796",

language = "English",

pages = "317--320",

journal = "Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium",

issn = "1529-2517",

note = "2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers ; Conference date: 12-06-2005 Through 14-06-2005",

}

TY - JOUR

T1 - Low power consumption 10-Gb/s SiGe modulator drivers with 9VPp differential output swing using intrinsic collector-base capacitance feedback network

AU - Li, Day Uei

AU - Huang, Li Ren

AU - Tsai, Chia-Ming

PY - 2005

Y1 - 2005

N2 - A novel intrinsic collector-base capacitance (CCB) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9VPp differential or 4.5VPP single-ended (S.E.) output swing with rise/fall time less than 29ps while it consumes power as low as 0.8W. The performances and simulation results compared with precedent works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the ever-reported silicon-based modulator drivers.

AB - A novel intrinsic collector-base capacitance (CCB) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9VPp differential or 4.5VPP single-ended (S.E.) output swing with rise/fall time less than 29ps while it consumes power as low as 0.8W. The performances and simulation results compared with precedent works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the ever-reported silicon-based modulator drivers.

KW - Cascode

KW - Feedback network

KW - Intrinsic collector-base capacitance

KW - Modulator drivers

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=27644576802&partnerID=8YFLogxK

U2 - 10.1109/RFIC.2005.1489796

DO - 10.1109/RFIC.2005.1489796

M3 - Conference article

AN - SCOPUS:27644576802

SN - 1529-2517

SP - 317

EP - 320

JO - Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium

JF - Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium

M1 - RMO4C-3

T2 - 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers

Y2 - 12 June 2005 through 14 June 2005

ER -

Low power consumption 10-Gb/s SiGe modulator drivers with 9VPp differential output swing using intrinsic collector-base capacitance feedback network

摘要

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Low power consumption 10-Gb/s SiGe modulator drivers with 9V_Pp differential output swing using intrinsic collector-base capacitance feedback network