Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu*, Chien-Nan Kuo

*此作品的通信作者

研究成果: Conference contribution同行評審

28 引文 斯高帕斯(Scopus)

摘要

A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

原文English
主出版物標題2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
頁面365-368
頁數4
DOIs
出版狀態Published - 1 十二月 2006
事件2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
持續時間: 18 一月 200620 一月 2006

出版系列

名字2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
2006

Conference

Conference2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
國家/地區United States
城市San Diego, CA
期間18/01/0620/01/06

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