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Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer
P. H. Chen
, Yu An Chen
, L. C. Chang
, W. C. Lai
,
Cheng-Huang Kuo
*
*
此作品的通信作者
照明與能源光電研究所
研究成果
:
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同行評審
7
引文 斯高帕斯(Scopus)
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Keyphrases
P-GaN
100%
Al-doped ZnO
100%
GaN-based Light-emitting Diodes
100%
Low-voltage Operation
100%
Light-emitting Diodes
60%
Short-period Superlattice
60%
GaN Layers
40%
Specific Contact Resistance
40%
Superlattice Structure
40%
Al-doped ZnO Films
40%
Electron Beam
20%
Thermal Annealing
20%
Power Output
20%
Indium Gallium Nitride (InGaN)
20%
Rapid Thermal Annealing
20%
As-deposited
20%
Sapphire
20%
Injection Current
20%
Forward Voltage
20%
High Transparency
20%
Double-sided
20%
Side-polished
20%
Material Science
Light-Emitting Diode
100%
ZnO
100%
Superlattice
42%
Film
28%
Contact Resistance
28%
Annealing
14%
Sapphire
14%
Engineering
Light-Emitting Diode
100%
Superlattice Structure
40%
Output Power
20%
Rapid Thermal Annealing
20%
Annealing Process
20%
Current Injection
20%
Forward Voltage
20%
Superlattice
20%