Abstract Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n + -InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10 -2 Ω cm 2 , which was almost the same as that of as-deposited AZO on n + -SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n + -SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.
|頁（從 - 到）||29-32|
|出版狀態||Published - 1 1月 2015|