Low-operating-voltage ultrathin junctionless poly-si thin-film transistor technology for RF applications

Tzu I. Tsai*, Kun Ming Chen, Horng-Chih Lin, Ting Yao Lin, Chun Jung Su, Tien-Sheng Chao, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 ×10 7. Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 μm exhibits a cutoff frequency (f t) of 3.36 GHz and a maximum oscillation frequency (f max) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (S id) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications.

原文English
文章編號6302168
頁(從 - 到)1565-1567
頁數3
期刊IEEE Electron Device Letters
33
發行號11
DOIs
出版狀態Published - 21 9月 2012

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